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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -33.5 i d @ v gs = -12v, t c = 100c continuous drain current -21 i dm pulsed drain current -134 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 303 mj i ar avalanche current -33.5 a e ar repetitive avalanche energy 25 mj dv/dt peak diode recovery dv/dt 10 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 3.3 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1 features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page radiation hardened power mosfet surface mount (smd-2) IRHNA597260 200v, p-channel technology smd-2 product summary part number radiation level r ds(on) i d IRHNA597260 100k rads (si) 0.102 ? -33.5a irhna593260 300k rads (si) 0.102 ? -33.5a pd-94168c
IRHNA597260 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.5 r thj-pcb junction-to-pc board ? 1.6 ?

c/w note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -33.5 i sm pulse source current (body diode) ? ? -134 v sd diode forward voltage ? ? -5.0 v t j = 25c, i s = -33.5a, v gs = 0v t rr reverse recovery time ? ? 450 ns t j = 25c, i f = -33.5a, di/dt -100a/ s q rr reverse recovery charge ? ? 5.5 cv dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -200 ? ? v v gs = 0v, i d = -1.0ma ? v (br)dss / ? t j breakdown voltage temp. coefficient ? 0.25 ? v/c reference to 25c, i d = -1.0ma r ds(on) static drain-to-source on-resistance ? ? 0.102 ? v gs = -12v, i d = -21a v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 23 ? ? s v ds > -15v, i d = -21a ? ? -10 a v ds = -160v, v gs = 0v i dss drain-to-source leakage current ? ? -25 v ds = -160v, v gs = 0v, t j = 125c gate-to-source forward leakage ? ? -100 na v gs = -20v gate-to-source reverse leakage ? ? 100 v gs = 20v q g total gate charge ? ? 180 v gs = -12v, i d = -33.5a q gs gate-to-source charge ? ? 75 nc v ds = -100v q gd gate-to-drain ("miller") charge ? ? 50 t d(on) turn-on delay time ? ? 50 v dd = -100v, i d = -33.5a t r rise time ? ? 100 ns v gs = -12v, r g = 2.35 ? t d(off) turn-off delay time ? ? 190 t f fall time ? ? 175 l s + l d total inductance ? 4.0 ? nh c iss input capacitanc ? 7170 ? v gs = 0v, v ds = -25v c oss output capacitance ? 920 ? pf ? = 1.0mhz c rss reverse transfer capacitance ? 86 ? measured from center of drain pad to center of source pad
www.irf.com 3 pre-irradiation IRHNA597260 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number IRHNA597260 2. part number irhna593260 fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.3 285 36.8 - 200 - 200 - 200 - 200 -75 i 59.9 345 32.7 - 200 - 200 - 200 - 50 ? au 82.3 357 28.5 - 200 - 200 - 200 - 35 ? -250 -200 -150 -100 -50 0 0 5 10 15 20 vgs vds br i au table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -200 ? -200 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20v i dss zero gate voltage drain current ? -10 ? -10 a v ds = -160v, v gs = 0v r ds(on) static drain-to-source ? 0.103 ? 0.103 ? v gs = -12v, i d = -21a on-state resistance (to-3) v sd diode forward voltage ? -5.0 ? -5.0 v v gs = 0v, i s = -33.5a
IRHNA597260 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 10 100 1000 5.0 5.5 6.0 6.5 7.0 v = -50v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -35.5a 10 100 1000 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 10 100 1000 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v -33.5a
www.irf.com 5 pre-irradiation IRHNA597260
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 0.1 1 10 100 1000 0.0 1.5 3.0 4.5 6.0 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 2000 4000 6000 8000 10000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 50 100 150 200 250 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -35.5a v = -40v ds v = -100v ds v = -160v ds -33.5a 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s
IRHNA597260 pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 - i d , d r a i n c u r r e n t ( a ) 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak t j = p dm x z thjc + tc
www.irf.com 7 pre-irradiation IRHNA597260 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -15a -21.2a bottom -33.5a
IRHNA597260 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -50v, starting t j = 25c, l= 0.54mh peak i l = -33.5a, v gs = -12v i sd -33.5a, di/dt - 450a/ s, v dd - 200v, t j 150c footnotes: case outline and dimensions ? smd-2 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2008

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